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Shantou Huashan Electronic Devices Co.,Ltd.
HC8550
PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION.
ABSOLUTE MAXIMUM RATINGSTa=25
T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................-40V VCEO----Collector-Emitter Voltage.................................-25V V EBO ----Emitter-Base Voltage....................................-6V I C ----Collector Current.............................................-1.5A 1EmitterE 2Collector C 3BaseB TO-92
ELECTRICAL CHARACTERISTICSTa=25
Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions
ICBO IEBO HFE VBE VCE(sat VBE(sat) BVCBO BVCEO BVEBO
85 40
-0.1 -0.1 500 -1 -0.5 -1.2
A A
fT
-40 -25 -6 100
V V V V V V MHz
VCB=-35V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-1V, IC=-10mA IC=-800mA, IB=-80mA IC=-800mA,IB=-80mA IC=-100AIE=0 IC=-2mAIB=0 IE=-100AIC=0 VCE=-10V, IC=-50mA
hFE Classification
B
C 120--200
D 160--300
E 270--500
85--160
Shantou Huashan Electronic Devices Co.,Ltd.
HC8550

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